Infineon Technologies publishes forecast report, supporting GaN multi-industry applications have reached a turning point
Author: Atkinson | Published on February 26, 2025 at 17:30
Infineon Technologies publishes forecast report, supporting GaN multi-industry applications have reached a turning point
Infineon published the "GaN Power Semiconductor Forecast Report 2025", which emphasized that GaN will become a game-changing semiconductor material that will significantly change the way the public improves energy efficiency and promotes low carbonization in areas such as consumption, transportation, residential solar energy, telecommunications and AI data centers.
Infineon pointed out that GaN can bring significant advantages to end-customer applications, including improved energy efficiency, reduced size, reduced weight and lower overall cost. Today, USB-C chargers and adapters are the leaders in GaN applications, and more industries are about to reach a critical turning point in GaN applications, which will greatly promote the development of the GaN power semiconductor market. Johannes Schoiswohl, head of Infineon's GaN business line, said that Infineon is committed to promoting low-carbon and digital transformation through innovations based on all semiconductor materials including Si, SiC and GaN. With advantages in efficiency, density, and size, GaN will play an increasingly important role in comprehensive power systems. And given that the cost gap between GaN and Si is narrowing, we foresee GaN adoption continuing to grow this year and beyond.
In addition, GaN technology is critical to the power supply needs of AI. As computing power and energy requirements of AI data centers grow rapidly, the market increasingly needs advanced solutions that can handle the huge loads associated with AI servers. In the past, the output power of power supplies was 3.3 kW, but it is now developing towards 5.5 kW and is expected to reach 12 kW or more in the future. The use of GaN can improve the power density of AI data centers, which will have a direct impact on the computing power that can be provided within limited rack space. Except GaN has clear advantages. On the other hand, using it in combination with Si and SiC is an ideal choice to meet the requirements of AI data centers and achieve a comprehensive trade-off between efficiency, power density and system cost.
As for the home appliance market, Infineon expects GaN to achieve rapid development as applications such as washing machines, dryers, refrigerators and water pumps/heat pumps require higher energy efficiency levels. For example: In an 800 W application, GaN can improve efficiency by 2%, helping manufacturers achieve Class A efficiency. According to Infineon, GaN-based EV onboard chargers and DC-DC converters will contribute to higher charging efficiency, power density and material sustainability, and are transitioning to systems above 20 kW. GaN will also enable more efficient 400 V and 800 V traction inverters for electric vehicle systems together with advanced SiC solutions, increasing the driving range of electric vehicles.
Infineon Technologies said that because GaN materials can improve the compactness of volume, the robotics industry will widely adopt GaN from 2025, which will promote the development of delivery drones, nursing robots and humanoid robots. And as robotics converges with advanced AI technologies such as natural language processing and computer vision, GaN will provide the efficiency needed to enable streamlined, high-performance designs. For example, integrating the inverter into the motor main housing eliminates the need for an inverter heat sink, reduces the number of cables per joint/axis, and simplifies EMC design.
Infineon further emphasized that in order to address the challenges in cost and scalability, Infineon is further increasing its investment in GaN research and development. With the richest product and IP portfolio, strict quality standards, and cutting-edge innovative technologies such as 12-inch GaN wafer manufacturing and bidirectional switch (BDS) transistors, Infineon is consolidating its leading position in promoting low carbonization and digitalization based on all relevant semiconductor materials including GaN.
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