IIT Bombay and Infineon Technologies today said they had jointly achieved a major breakthrough in integration of high voltage functionality for advanced CMOS technologies.
Modern CMOS technologies, a major class of integrated circuits, used in current generation computers and mobiles cannot handle high voltages but with this breakthrough, integration of high voltage application is possible, overcoming the current limitations, Professor V Ramgopal Rao from IIT's Electrical Department told PTI.
This new development can also help in making applications like high performance, low-cost single chip mobiles, Rao, who was also the team leader for the project, said.
Based on this, high voltage functionality ranging from USB interfaces to high voltage line drivers can be integrated into "system-on-silicon" solutions in 45 nm (nanometre) CMOS and below, he said adding the results would be presented at the International Reliability Physics Symposium at Montreal this weekend.
"This integration of high voltage functionality for advanced CMOS technologies was able to explain the mechanisms behind electrostatic discharge (ESD) events in high voltage field effect transistor (FET) devices," he said.
"Weak ESD robustness against exposure to high ESD stress at the end-user side had been a roadblock for the construction of high voltage interfaces at 10V and beyond in advanced CMOS technologies," Rao said. The insight into the physics of high voltage devices now allows the optimisation of the layout of high voltage IO (input/output) devices, he added.
IIT and Infineon, as part of the collaboration, also addressed the optimisation of multi-gate metal oxide semiconductor field effect transistor (MOSFET) devices last year which was demonstrated at the International Electron Device Meeting.
Rao said the collaboration had been extremely helpful in exposing them to challenging real world industry problems, and provided students a chance to closely interact with one of the world's leading semiconductor companies.
Dr Harald Gossner, Senior Principal Engineer, who represents ESD research activity at Infineon said, "This collaboration has been very helpful to us in understanding the complex nature of some of the existing device reliability issues, and the solutions proposed significantly improve our products".
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